Technical parameters/dissipated power: 110W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 203 ns
Technical parameters/Input capacitance (Ciss): 1480pF @25V(Vds)
Technical parameters/descent time: 74 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76429P3
|
Intersil | 功能相似 |
44A , 60V , 0.025 Ohm的N通道,逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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|||
HUF76429P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
44A , 60V , 0.025 Ohm的N通道,逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76429P3
|
Fairchild | 功能相似 | TO-220-3 |
44A , 60V , 0.025 Ohm的N通道,逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76429P3_NL
|
Fairchild | 功能相似 | TO-220 |
TO-220AB N-CH 60V 47A
|
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