Technical parameters/dissipated power: 260W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 4115pF @25V(Vds)
Technical parameters/dissipated power (Max): 260W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ14PBF
|
VISHAY | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
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IRFZ14PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Infineon | 功能相似 |
功率MOSFET Power MOSFET
|
|||
IRFZ14PBF
|
LiteOn | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
功率MOSFET Power MOSFET
|
||
STP60NF06L
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
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