Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/drain source resistance: 8.20 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 270W (Tc)
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/Input capacitance (Ciss): 3750pF @25V(Vds)
Technical parameters/rated power (Max): 270 W
Technical parameters/dissipated power (Max): 270W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP75N08
|
ON Semiconductor | 功能相似 | TO-220-3 |
75V N沟道MOSFET 75V N-Channel MOSFET
|
||
FDP75N08
|
Fairchild | 功能相似 | TO-220-3 |
75V N沟道MOSFET 75V N-Channel MOSFET
|
||
FDP75N08A
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
FDP75N08A
|
Freescale | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
FDP75N08A
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
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