Technical parameters/dissipated power: 131W (Tc)
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Input capacitance (Ciss): 4468pF @25V(Vds)
Technical parameters/dissipated power (Max): 131W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP75N08
|
ON Semiconductor | 功能相似 | TO-220-3 |
75V N沟道MOSFET 75V N-Channel MOSFET
|
||
FDP75N08
|
Fairchild | 功能相似 | TO-220-3 |
75V N沟道MOSFET 75V N-Channel MOSFET
|
||
FDP75N08A
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON Semiconductor UniFET 系列 Si N沟道 MOSFET FDP75N08A, 75 A, Vds=75 V, 3引脚 TO-220AB封装
|
||
FDP75N08A
|
Freescale | 类似代替 | TO-220-3 |
ON Semiconductor UniFET 系列 Si N沟道 MOSFET FDP75N08A, 75 A, Vds=75 V, 3引脚 TO-220AB封装
|
||
FDP75N08A
|
Rochester | 类似代替 | TO-220 |
ON Semiconductor UniFET 系列 Si N沟道 MOSFET FDP75N08A, 75 A, Vds=75 V, 3引脚 TO-220AB封装
|
||
HUF75545S3
|
Fairchild | 功能相似 | TO-262-3 |
75A , 80V , 0.010 Ohm的N通道, UltraFET功率MOSFET 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET
|
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