Technical parameters/dissipated power: 137 W
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/rise time: 212 ns
Technical parameters/Input capacitance (Ciss): 3437pF @25V(Vds)
Technical parameters/rated power (Max): 137 W
Technical parameters/descent time: 147 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 137000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP75N08
|
ON Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 75V 75A TO-220
|
||
FDP75N08
|
Fairchild | 类似代替 | TO-220-3 |
MOSFET N-CH 75V 75A TO-220
|
||
IRF2807Z
|
International Rectifier | 功能相似 | TO-220 |
TO-220AB N-CH 75V 89A
|
||
STP75NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
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