Technical parameters/rated voltage (DC): 75.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/drain source resistance: 7.50 MΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 170 W
Technical parameters/product series: IRF2807Z
Technical parameters/drain source voltage (Vds): 75.0 V
Technical parameters/leakage source breakdown voltage: 75.0V (min)
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 79.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP75N08A
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
FDP75N08A
|
Freescale | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
FDP75N08A
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
STP140NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP140NF75 晶体管, MOSFET, N沟道, 120 A, 75 V, 7.5 mohm, 10 V, 4 V
|
||
STP75NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review