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Model HUF75307T3ST_NL
Description 2.6A, 55V, 0.09Ω, N-Channel UltraFET PowerMOSFET
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Brand: Fairchild
Packaging SOT-223
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8161) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 2.6A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-223

External dimensions/packaging: SOT-223

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF75307T3ST HUF75307T3ST ON Semiconductor 功能相似 TO-261-4
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
PDF
HUF75307T3ST HUF75307T3ST Fairchild 功能相似 SOT-223-4
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
PDF
HUF75307T3ST HUF75307T3ST VISHAY 功能相似 SOT-223
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
PDF

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