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Model HUF75307T3ST
Description 2.6A ， 55V ， 0.090 OhmN-Channel UltraFET Power MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
Product QR code
Brand: Fairchild
Packaging SOT-223-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.9  yuan 0.9yuan
10+:
$ 1.2110
50+:
$ 1.1482
100+:
$ 1.1033
300+:
$ 1.0764
500+:
$ 1.0495
1000+:
$ 1.0226
2500+:
$ 0.9822
5000+:
$ 0.9732
Quantity
10+
50+
100+
300+
500+
Price
$1.2110
$1.1482
$1.1033
$1.0764
$1.0495
Price $ 1.2110 $ 1.1482 $ 1.1033 $ 1.0764 $ 1.0495
Start batch production 10+ 50+ 100+ 300+ 500+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6984) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 55.0 V

Technical parameters/rated current: 2.60 A

Technical parameters/drain source resistance: 90.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.1 W

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/leakage source breakdown voltage: 55.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 2.60 A

Technical parameters/rise time: 30 ns

Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)

Technical parameters/rated power (Max): 1.1 W

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.1W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-223-4

External dimensions/length: 6.5 mm

External dimensions/width: 3.5 mm

External dimensions/height: 1.8 mm

External dimensions/packaging: SOT-223-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF75307T3ST HUF75307T3ST ON Semiconductor 功能相似 TO-261-4
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
PDF
HUF75307T3ST HUF75307T3ST Fairchild 功能相似 SOT-223-4
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
PDF
HUF75307T3ST HUF75307T3ST VISHAY 功能相似 SOT-223
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
PDF
STN3NF06L STN3NF06L ST Microelectronics 功能相似 TO-261-4
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
PDF

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