Technical parameters/dissipated power: 1.1W (Ta)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75307T3ST
|
ON Semiconductor | 功能相似 | TO-261-4 |
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
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||
HUF75307T3ST
|
Fairchild | 功能相似 | SOT-223-4 |
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
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HUF75307T3ST
|
VISHAY | 功能相似 | SOT-223 |
2.6A ， 55V ， 0.090 Ohm的N通道UltraFET功率MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
|
||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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