Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 30 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 1.20 A
Technical parameters/rise time: 21 ns
Technical parameters/descent time: 32 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIBF20G
|
VISHAY | 功能相似 | TO-220 |
MOSFET N-CH 900V 1.2A TO220FP
|
||
IRFIBF20G
|
International Rectifier | 功能相似 |
MOSFET N-CH 900V 1.2A TO220FP
|
|||
IRFIBF20G
|
Vishay Intertechnology | 功能相似 | TO-220 |
MOSFET N-CH 900V 1.2A TO220FP
|
||
IRFIBF20G
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
MOSFET N-CH 900V 1.2A TO220FP
|
||
IRFIBF20G
|
IRF | 功能相似 | TO-220-3 |
MOSFET N-CH 900V 1.2A TO220FP
|
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