Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 2.8A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT13N06L
|
Fairchild | 功能相似 | SOT-223 |
Small Signal Field-Effect Transistor
|
||
FQT13N06LTF
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT13N06LTF, 2.8 A, Vds=60 V, 3针+焊片 SOT-223封装
|
||
FQT13N06LTF
|
Rochester | 功能相似 | SOT-223 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT13N06LTF, 2.8 A, Vds=60 V, 3针+焊片 SOT-223封装
|
||
FQT13N06TF
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT13N06TF, 2.8 A, Vds=60 V, 3针+焊片 SOT-223封装
|
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