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Model FQT13N06LTF

Description ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT13N06LTF, 2.8 A, Vds=60 V, 3针+焊片 SOT-223封装

Brand: ON Semiconductor

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.088 Ω
Technical parameters/dissipated power:	2.1 W
Technical parameters/threshold voltage:	2.5 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/rise time:	90 ns
Technical parameters/Input capacitance (Ciss):	270pF @25V(Vds)
Technical parameters/rated power (Max):	2.1 W
Technical parameters/descent time:	40 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.1 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Length:	6.5 mm
Dimensions/Width:	3.56 mm
Dimensions/Height:	1.6 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power management, motor drive and control, audio
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FQT13N06LTF	ON Semiconductor	功能相似	TO-261-4	ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT13N06LTF, 2.8 A, Vds=60 V, 3针+焊片 SOT-223封装
FQT13N06LTF	Rochester	功能相似	SOT-223	ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT13N06LTF, 2.8 A, Vds=60 V, 3针+焊片 SOT-223封装	PDF
FQT13N06TF	ON Semiconductor	功能相似	TO-261-4	ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT13N06TF, 2.8 A, Vds=60 V, 3针+焊片 SOT-223封装	PDF