Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.11 Ω |
|
Technical parameters/dissipated power: | 2.1 W |
|
Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 25 ns |
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Technical parameters/Input capacitance (Ciss): | 240pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 2.1 W |
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Technical parameters/descent time: | 15 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.1 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Length: | 6.5 mm |
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Dimensions/Width: | 3.56 mm |
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Dimensions/Height: | 1.6 mm |
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Dimensions/Packaging: | TO-261-4 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Audio, power management, motor drive and control |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT13N06LTF
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT13N06LTF 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.088 ohm, 10 V, 2.5 V
|
||
FQT13N06LTF
|
Rochester | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR FQT13N06LTF 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.088 ohm, 10 V, 2.5 V
|
||
FQT13N06TF
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT13N06TF 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
|
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