Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 2.20 A
Technical parameters/drain source resistance: 3.60 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 43W (Tc)
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 2.20 A
Technical parameters/Input capacitance (Ciss): 880pF @25V(Vds)
Technical parameters/rated power (Max): 43 W
Technical parameters/dissipated power (Max): 43W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP11N80C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP11N80C3 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
|
||
STD18N55M5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
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STP5NK80Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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