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Model FQPF630
Description QFET® N Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.33  yuan 3.33yuan
5+:
$ 4.4996
25+:
$ 4.1663
50+:
$ 3.9329
100+:
$ 3.8330
500+:
$ 3.7663
2500+:
$ 3.6830
5000+:
$ 3.6496
10000+:
$ 3.5996
Quantity
5+
25+
50+
100+
500+
Price
$4.4996
$4.1663
$3.9329
$3.8330
$3.7663
Price $ 4.4996 $ 4.1663 $ 3.9329 $ 3.8330 $ 3.7663
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2121) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 200 V

Technical parameters/rated current: 6.30 A

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 400 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 38 W

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/leakage source breakdown voltage: 200 V

Technical parameters/breakdown voltage of gate source: ±25.0 V

Technical parameters/Continuous drain current (Ids): 6.30 A

Technical parameters/rise time: 75 ns

Technical parameters/Input capacitance (Ciss): 550pF @25V(Vds)

Technical parameters/rated power (Max): 38 W

Technical parameters/descent time: 64 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 38000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.16 mm

External dimensions/width: 4.7 mm

External dimensions/height: 9.19 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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