Technical parameters/dissipated power: 48W (Tc)
Technical parameters/drain source voltage (Vds): 700 V
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 48W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP33N10
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP33N10, 33 A, Vds=100 V, 3引脚 TO-220AB封装
|
||
FQP33N10
|
Rochester | 功能相似 | TO-220 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP33N10, 33 A, Vds=100 V, 3引脚 TO-220AB封装
|
||
STD18N55M5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
|
||
STD6N95K5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
|
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