Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 19.4 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 150 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.13 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 19.4 A
Technical parameters/rise time: 190 ns
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/rated power (Max): 3.13 W
Technical parameters/descent time: 80 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.13W (Ta), 140W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/width: 9.65 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640NSTRRPBF
|
International Rectifier | 功能相似 | TO-263-3 |
D2PAK N-CH 200V 18A
|
||
|
|
Harris | 功能相似 | TO-220AB |
N沟道 150V 18A
|
||
STB19NF20
|
ST Microelectronics | 功能相似 | TO-263-3 |
STB19NF20 系列 200 V 0.16 Ohm 表面贴装 N 沟道 功率 MOSFET - D2PAK
|
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