Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 34.0 A
Technical parameters/drain source resistance: 75.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 210 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 34.0 A
Technical parameters/rise time: 520 ns
Technical parameters/Input capacitance (Ciss): 3900pF @25V(Vds)
Technical parameters/rated power (Max): 210 W
Technical parameters/descent time: 370 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 210W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 16.2 mm
External dimensions/width: 5 mm
External dimensions/height: 20.1 mm
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA24N60
|
Freescale | 功能相似 | TO-3-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQA24N60, 23 A, Vds=600 V, 3引脚 TO-3PN封装
|
||
STD18N55M5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
|
||
STD6N95K5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
|
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