Technical parameters/polarity: NPN+PNP
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30 @20mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSSOP-6
External dimensions/height: 1 mm
External dimensions/packaging: TSSOP-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5311DW1T1
|
Motorola | 功能相似 |
MUN5311DW1T1 NPN+PNP复合带阻尼三极管 -50V/50V -100mA/100mA 60 250mW/0.25W SOT-363/SC-88/SC70-6 标记11F 开关电路 逆变器 接口电路 驱动电路
|
|||
MUN5311DW1T1
|
ON Semiconductor | 功能相似 | SOT-363 |
MUN5311DW1T1 NPN+PNP复合带阻尼三极管 -50V/50V -100mA/100mA 60 250mW/0.25W SOT-363/SC-88/SC70-6 标记11F 开关电路 逆变器 接口电路 驱动电路
|
||
MUN5311DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5311DW1T1G. 标准恢复功率整流器
|
||
PUMD3,115
|
NXP | 功能相似 | SOT-363 |
Nexperia PUMD3,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 6引脚 SOT-363 (SC-88)封装
|
||
PUMD3,165
|
NXP | 功能相似 | SOT-363-6 |
1个NPN-预偏置,1个PNP-预偏置 100mA 50V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review