Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN+PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 35 @5mA, 10V
Technical parameters/rated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IMD10AT108
|
ROHM Semiconductor | 功能相似 | SC-74-6 |
IMD10A 系列 50 V 500 mA 表面贴装 双 NPN/PNP 数字晶体管 - SC-74
|
||
MUN5311DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5311DW1T1G. 标准恢复功率整流器
|
||
PUMD3,115
|
NXP | 功能相似 | SOT-363 |
Nexperia PUMD3,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 6引脚 SOT-363 (SC-88)封装
|
||
PUMD3,165
|
NXP | 功能相似 | SOT-363-6 |
1个NPN-预偏置,1个PNP-预偏置 100mA 50V
|
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