Technical parameters/polarity: | NPN+PNP |
|
Technical parameters/dissipated power: | 0.3 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 30 @5mA, 5V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363-6 |
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Dimensions/Packaging: | SOT-363-6 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMD3,115
|
NXP | 类似代替 | SOT-363 |
Nexperia PUMD3,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 6引脚 SOT-363 (SC-88)封装
|
||
PUMD3,125
|
NXP | 完全替代 | TSSOP-6 |
TSSOP NPN+PNP 50V 100mA
|
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