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Model FDS9933
Description Power Field-Effect Transistor
Product QR code
Brand: ON Semiconductor
Packaging SOP-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4068) Minimum order quantity(1)
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Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/rise time: 46 ns

Technical parameters/Input capacitance (Ciss): 825pF @10V(Vds)

Technical parameters/rated power (Max): 900 mW

Technical parameters/descent time: 25 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOP-8

External dimensions/packaging: SOP-8

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS9933A FDS9933A ON Semiconductor 类似代替 SOIC-8
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NDS9933 NDS9933 ON Semiconductor 类似代替 SOIC-8
双P沟道增强型场效应晶体管 Dual P-Channel Enhancement Mode Field Effect Transistor
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