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Model NDS9933
Description Dual P-channel Enhancement Mode Field Effect Transistor
Product QR code
Brand: Fairchild
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3968) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): -20.0 V

Technical parameters/rated current: -3.20 A

Technical parameters/drain source voltage (Vds): 20.0 V

Technical parameters/Continuous drain current (Ids): 3.20 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS9933 FDS9933 Freescale 类似代替
双P沟道2.5V指定的PowerTrench MOSFET Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9933 FDS9933 Fairchild 类似代替 SOIC-8
双P沟道2.5V指定的PowerTrench MOSFET Dual P-Channel 2.5V Specified PowerTrench MOSFET
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FDS9933 FDS9933 ON Semiconductor 类似代替 SOP-8
双P沟道2.5V指定的PowerTrench MOSFET Dual P-Channel 2.5V Specified PowerTrench MOSFET
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FDS9933A FDS9933A ON Semiconductor 类似代替 SOIC-8
FAIRCHILD SEMICONDUCTOR FDS9933A 双路场效应管, MOSFET, 双P沟道, -3.8 A, -20 V, 75 mohm, -4.5 V, -800 mV
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