Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -5.00 A
Technical parameters/drain source resistance: 55.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/Input capacitance (Ciss): 825pF @10V(Vds)
Technical parameters/rated power (Max): 900 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS9933A
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS9933A 双路场效应管, MOSFET, 双P沟道, -3.8 A, -20 V, 75 mohm, -4.5 V, -800 mV
|
||
|
|
ON Semiconductor | 类似代替 | SOIC-8 |
双P沟道增强型场效应晶体管 Dual P-Channel Enhancement Mode Field Effect Transistor
|
||
NDS9933
|
Fairchild | 类似代替 | SOIC |
双P沟道增强型场效应晶体管 Dual P-Channel Enhancement Mode Field Effect Transistor
|
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