Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Input capacitance (Ciss): | 870pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 900 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 类似代替 |
双P沟道2.5V指定的PowerTrench MOSFET Dual P-Channel 2.5V Specified PowerTrench MOSFET
|
|||
FDS9933
|
Fairchild | 类似代替 | SOIC-8 |
双P沟道2.5V指定的PowerTrench MOSFET Dual P-Channel 2.5V Specified PowerTrench MOSFET
|
||
FDS9933
|
ON Semiconductor | 类似代替 | SOP-8 |
双P沟道2.5V指定的PowerTrench MOSFET Dual P-Channel 2.5V Specified PowerTrench MOSFET
|
||
FDS9933A
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS9933A 双路场效应管, MOSFET, 双P沟道, -3.8 A, -20 V, 75 mohm, -4.5 V, -800 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review