Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.037 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 700 mW
Technical parameters/threshold voltage: 700 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/rise time: 2.2 ns
Technical parameters/Input capacitance (Ciss): 500pF @10V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 2.3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: WDFN-6
External dimensions/length: 2 mm
External dimensions/width: 2 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: WDFN-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMA1023PZ
|
Fairchild | 功能相似 | WDFN-6 |
ON Semiconductor PowerTrench 系列 双 Si P沟道 MOSFET FDMA1023PZ, 3.7 A, Vds=20 V, 6引脚 MLP封装
|
||
|
|
ON Semiconductor | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1027PT 双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
|
||
FDMA1027PT
|
Fairchild | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1027PT 双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review