Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.09 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 3A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 435pF @10V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: WDFN-6
External dimensions/length: 2 mm
External dimensions/width: 2 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: WDFN-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMA1023PZ
|
Fairchild | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1023PZ 双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 60 mohm, -4.5 V, -700 mV
|
||
FDMA1024NZ
|
ON Semiconductor | 类似代替 | VDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1024NZ 双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.037 ohm, 4.5 V, 700 mV
|
||
FDMA1024NZ
|
Fairchild | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1024NZ 双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.037 ohm, 4.5 V, 700 mV
|
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