Technical parameters/number of pins: | 6 |
|
Technical parameters/drain source resistance: | 0.037 Ω |
|
Technical parameters/dissipated power: | 1.4 W |
|
Technical parameters/threshold voltage: | 700 mV |
|
Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/rise time: | 2.2 ns |
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Technical parameters/Input capacitance (Ciss): | 375pF @10V(Vds) |
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Technical parameters/rated power (Max): | 700 mW |
|
Technical parameters/descent time: | 2.3 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.4 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | VDFN-6 |
|
Dimensions/Length: | 2 mm |
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Dimensions/Width: | 2 mm |
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Dimensions/Height: | 0.75 mm |
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Dimensions/Packaging: | VDFN-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Power Management, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMA1023PZ
|
Fairchild | 功能相似 | WDFN-6 |
ON Semiconductor PowerTrench 系列 双 Si P沟道 MOSFET FDMA1023PZ, 3.7 A, Vds=20 V, 6引脚 MLP封装
|
||
|
|
ON Semiconductor | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1027PT 双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
|
||
FDMA1027PT
|
Fairchild | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1027PT 双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
|
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