Chip AI consultant
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 435pF @10V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: WDFN-6
External dimensions/packaging: WDFN-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMA1023PZ
|
Fairchild | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1023PZ 双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 60 mohm, -4.5 V, -700 mV
|
||
FDMA1024NZ
|
ON Semiconductor | 类似代替 | VDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1024NZ 双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.037 ohm, 4.5 V, 700 mV
|
||
FDMA1024NZ
|
Fairchild | 类似代替 | WDFN-6 |
FAIRCHILD SEMICONDUCTOR FDMA1024NZ 双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.037 ohm, 4.5 V, 700 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review