Technical parameters/dissipated power: 39 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 3080pF @25V(Vds)
Technical parameters/rated power (Max): 39 W
Technical parameters/dissipated power (Max): 39W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCPF20N60
|
ON Semiconductor | 类似代替 | TO-220-3 |
晶体管, MOSFET, N沟道, 20 A, 600 V, 0.15 ohm, 10 V, 5 V
|
||
FCPF20N60T
|
Fairchild | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 600V 20A 3Pin(3+Tab) TO-220F Rail
|
||
FCPF20N60T
|
ON Semiconductor | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 600V 20A 3Pin(3+Tab) TO-220F Rail
|
||
FCPF20N60TYDTU
|
Fairchild | 功能相似 | TO-220F-3 |
Trans MOSFET N-CH 600V 20A 3Pin(3+Tab) TO-220F Rail
|
||
FCPF22N60NT
|
ON Semiconductor | 类似代替 | TO-220-3 |
FCPF22N60NT 管装
|
||
TK20A60U
|
Toshiba | 功能相似 | TO-220-3 |
TO-220SIS N-CH 600V 20A
|
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