Chip AI consultant
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 45 W |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 20A |
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Technical parameters/Input capacitance (Ciss): | 1470pF @10V(Vds) |
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Technical parameters/rated power (Max): | 45 W |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCPF20N60T
|
Fairchild | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 600V 20A 3Pin(3+Tab) TO-220F Rail
|
||
FCPF20N60T
|
ON Semiconductor | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 600V 20A 3Pin(3+Tab) TO-220F Rail
|
||
R6020ANX
|
ROHM Semiconductor | 功能相似 | TO-220-3 |
10V驱动N沟道MOSFET 10V Drive Nch MOSFET
|
||
STF18N65M5
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
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