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Model R6020ANX
Description 10VDrive N-channel MOSFET 10V Drive Nch MOSFET
Product QR code
Brand: ROHM Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
19.59  yuan 19.59yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9646) Minimum order quantity(1)
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Technical parameters/dissipated power:

85 W

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/rise time:

60 ns

 

Technical parameters/Input capacitance (Ciss):

2040pF @25V(Vds)

 

Technical parameters/rated power (Max):

50 W

 

Technical parameters/descent time:

70 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/dissipated power (Max):

50W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Not For New Designs

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
R6020ENX R6020ENX ROHM Semiconductor 类似代替 TO-220-3
N 通道 MOSFET 晶体管，ROHM ### MOSFET 晶体管，ROHM
PDF
TK20A60U TK20A60U Toshiba 功能相似 TO-220-3
TO-220SIS N-CH 600V 20A

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