Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.17 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 68 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/rise time: 53 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/descent time: 67 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.8 mm
External dimensions/height: 15.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
R6020ANX
|
ROHM Semiconductor | 类似代替 | TO-220-3 |
10V驱动N沟道MOSFET 10V Drive Nch MOSFET
|
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