Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.15 Ω |
|
Technical parameters/dissipated power: | 39 W |
|
Technical parameters/threshold voltage: | 5 V |
|
Technical parameters/drain source voltage (Vds): | 600 V |
|
Technical parameters/rise time: | 140 ns |
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Technical parameters/Input capacitance (Ciss): | 2370pF @25V(Vds) |
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Technical parameters/rated power (Max): | 39 W |
|
Technical parameters/descent time: | 65 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 39000 mW |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Rail, Tube |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCPF20N60T
|
Fairchild | 类似代替 | TO-220-3 |
MOSFET N-CH 600V 20A TO-220F
|
||
FCPF20N60T
|
ON Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 600V 20A TO-220F
|
||
FCPF22N60NT
|
ON Semiconductor | 类似代替 | TO-220-3 |
FCPF22N60NT 管装
|
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