Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.07 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 2.60 A
Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Onboard charger
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NXP | 功能相似 | SC-73 |
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Siemens Semiconductor | 功能相似 |
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BSP318S
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PHT6N06LT
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Philips | 功能相似 |
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PHT6N06LT
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NXP | 功能相似 | SOT-223 |
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