Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.14 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.9 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 3.80 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Aerospace, Defense, Power Management, Military, Military and Aviation, Defence, Power Management, Motor Drive&Control, Motor Drive&Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 |
Infineon SIPMOS® N 通道 MOSFET
|
|||
BSP318S
|
Infineon | 功能相似 | SOT-223 |
Infineon SIPMOS® N 通道 MOSFET
|
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