Technical parameters/power supply voltage (DC): 5.00 V
Technical parameters/power supply current: 50 mA
Technical parameters/access time: 200 ns
Technical parameters/access time (Max): 200 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: DIP-28
External dimensions/packaging: DIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BQ4010MA-200
|
Benchmarq | 类似代替 | DIP |
为8K ×8非易失性SRAM ( 5 V , 3.3 V ) 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V)
|
||
BQ4010MA-200
|
TI | 类似代替 | DIP-28 |
为8K ×8非易失性SRAM ( 5 V , 3.3 V ) 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V)
|
||
DS1225Y-200+
|
Maxim Integrated | 类似代替 | EDIP-28 |
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.72INCH, ROHS COMPLIANT, DIP-28
|
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