Technical parameters/working voltage: 4.5V ~ 5.5V
Technical parameters/access time: 200 ns
Technical parameters/memory capacity: 2000 B
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: EDIP-28
External dimensions/length: 39.12 mm
External dimensions/width: 18.29 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: EDIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1225AB-200+
|
Maxim Integrated | 类似代替 | EDIP-28 |
MAXIM INTEGRATED PRODUCTS DS1225AB-200+ 芯片, 存储器, NVRAM
|
||
DS1225AB-200+
|
Dallas Semiconductor | 类似代替 | 720 EMOD |
MAXIM INTEGRATED PRODUCTS DS1225AB-200+ 芯片, 存储器, NVRAM
|
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