Technical parameters/number of pins: 6
Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCR48PN
|
Infineon | 功能相似 | SOT-363 |
BCR48PN NPN+PNP复合带阻尼三极管 50V/-50V 70mA/-100mA 70 250mW/0.25W SOT-363/SC-88/SC70-6 标记W1 开关电路 逆变器 接口电路 驱动电路
|
||
PUMD48,115
|
Nexperia | 完全替代 | SOT-363-6 |
NXP PUMD48,115 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMD48,165
|
Nexperia | 类似代替 | TSSOP-6 |
1个NPN-预偏置,1个PNP-预偏置 100mA 50V
|
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