Technical parameters/polarity: NPN+PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 70mA/100mA
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMD48
|
Nexperia | 功能相似 | UMT |
NXP PUMD48 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMD48
|
NXP | 功能相似 | SOT-363 |
NXP PUMD48 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMD48,115
|
Nexperia | 功能相似 | SOT-363-6 |
NXP PUMD48,115 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
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