Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 65.0 V
Technical parameters/rated current: 100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 800
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 110
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC546BTAR
|
ON Semiconductor | 完全替代 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) NPN Si Transistor Epitaxial
|
||
BC546BTF
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC546BTF 单晶体管 双极, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 200 hFE
|
||
BC546BTFR
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT NPN 65V 0.1A 3Pin TO-92 T/R
|
||
BC546BTFR
|
Freescale | 完全替代 |
Trans GP BJT NPN 65V 0.1A 3Pin TO-92 T/R
|
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