Technical parameters/rated voltage (DC): 65.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC546BTA
|
Fairchild | 完全替代 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR BC546BTA 单晶体管 双极, 小信号, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 110 hFE
|
||
BC546BTAR
|
ON Semiconductor | 完全替代 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) NPN Si Transistor Epitaxial
|
||
BC546BTF
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC546BTF 单晶体管 双极, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 200 hFE
|
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