Technical parameters/frequency: 300 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/minimum current amplification factor (hFE): 110
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC546BTA
|
Fairchild | 类似代替 | TO-92-3 |
ON Semiconductor BC546BTA , NPN 晶体管, 100 mA, Vce=65 V, HFE:110, 300 MHz, 3引脚 TO-92封装
|
||
BC546BTF
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC546BTF 单晶体管 双极, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 200 hFE
|
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