Technical parameters/frequency: 945 MHz
Technical parameters/rated voltage (DC): 65.0 V
Technical parameters/rated current: 7 A
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 79 W
Technical parameters/drain source voltage (Vds): 65 V
Technical parameters/leakage source breakdown voltage: 65 V
Technical parameters/Continuous drain current (Ids): 7.00 A
Technical parameters/output power: 60 W
Technical parameters/gain: 14.3 dB
Technical parameters/test current: 100 mA
Technical parameters/Input capacitance (Ciss): 83pF @28V(Vds)
Technical parameters/operating temperature (Max): 165 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 79000 mW
Technical parameters/rated voltage: 65 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PowerSO-10RF
External dimensions/length: 7.5 mm
External dimensions/width: 9.4 mm
External dimensions/height: 3.5 mm
External dimensions/packaging: PowerSO-10RF
Physical parameters/operating temperature: -65℃ ~ 165℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD57060-E
|
ST Microelectronics | 完全替代 | PowerSO-10RF |
MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics
|
||
PD57060-E
|
ST Microelectronics | 完全替代 | PowerSO-10RF |
MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics
|
||
PD57060TR-E
|
ST Microelectronics | 类似代替 | PowerSO-10RF |
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
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