PD57060-E In Stock|PDF|Datasheet|Price|Agent[PD57060-E Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

Model PD57060-E

Description MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics

Brand: ST Microelectronics

Packaging PowerSO-10RF

Delivery time

Packaging method Tube

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

Technical parameters/frequency:	945 MHz
Technical parameters/rated voltage (DC):	65.0 V
Technical parameters/rated current:	7 A
Technical parameters/dissipated power:	79 W
Technical parameters/Input capacitance:	83 pF
Technical parameters/drain source voltage (Vds):	65 V
Technical parameters/Continuous drain current (Ids):	7.00 A
Technical parameters/output power:	60 W
Technical parameters/gain:	14.3 dB
Technical parameters/test current:	100 mA
Technical parameters/Input capacitance (Ciss):	83pF @28V(Vds)
Technical parameters/operating temperature (Max):	165 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	79000 mW
Technical parameters/rated voltage:	65 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	PowerSO-10RF
Dimensions/Length:	9.5 mm
Dimensions/Width:	7.6 mm
Dimensions/Height:	3.6 mm
Dimensions/Packaging:	PowerSO-10RF
Physical parameters/operating temperature:	-65℃ ~ 165℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
PD57060-E	ST Microelectronics	完全替代	PowerSO-10RF	MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics
PD57060-E	ST Microelectronics	完全替代	PowerSO-10RF	MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics	PDF
PD57060TR-E	ST Microelectronics	类似代替	PowerSO-10RF	RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs	PDF