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Model PD57060TR-E
Description RFPower transistor, LDMOST plastic series N-channel enhancement mode lateral MOSFET RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Product QR code
Brand: ST Microelectronics
Packaging PowerSO-10RF
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
416.92  yuan 416.92yuan
1+:
$ 479.4523
10+:
$ 466.9448
50+:
$ 457.3558
100+:
$ 454.0204
200+:
$ 451.5189
500+:
$ 448.1836
1000+:
$ 446.0991
2000+:
$ 444.0145
Quantity
1+
10+
50+
100+
200+
Price
$479.4523
$466.9448
$457.3558
$454.0204
$451.5189
Price $ 479.4523 $ 466.9448 $ 457.3558 $ 454.0204 $ 451.5189
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9210) Minimum order quantity(1)
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Technical parameters/frequency: 945 MHz

Technical parameters/dissipated power: 79000 mW

Technical parameters/output power: 60 W

Technical parameters/gain: 14.3 dB

Technical parameters/test current: 100 mA

Technical parameters/Input capacitance (Ciss): 83pF @28V(Vds)

Technical parameters/operating temperature (Max): 165 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 79000 mW

Technical parameters/rated voltage: 65 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: PowerSO-10RF

External dimensions/packaging: PowerSO-10RF

Physical parameters/operating temperature: -65℃ ~ 165℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PD57060-E PD57060-E ST Microelectronics 类似代替 PowerSO-10RF
MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics
PD57060-E PD57060-E ST Microelectronics 类似代替 PowerSO-10RF
MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics
PDF
PD57060S-E PD57060S-E ST Microelectronics 类似代替 PowerSO-10RF
60W,28V,0.945GHz,射频LDMOS晶体管
PDF

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