Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.075 Ω
Technical parameters/dissipated power: 99 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/Encapsulation: SOT-78
External dimensions/packaging: SOT-78
Other/Product Lifecycle: Obsolete
Other/Manufacturing Applications: Power management, industrial, lighting, automotive, motor drive and control
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7575-100A,127
|
Nexperia | 功能相似 | TO-220-3 |
TO-220AB N-CH 100V 23A
|
||
IRL540PBF
|
VISHAY | 功能相似 | TO-220-3 |
VISHAY IRL540PBF 晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
|
||
IRL540PBF
|
Vishay Intertechnology | 功能相似 |
VISHAY IRL540PBF 晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
|
|||
IRL540PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY IRL540PBF 晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
|
||
STP24NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP24NF10 晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review