Technical parameters/dissipated power: 99W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 39 ns
Technical parameters/Input capacitance (Ciss): 1210pF @25V(Vds)
Technical parameters/rated power (Max): 99 W
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 99W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7575-100A
|
NXP | 功能相似 | SOT-78 |
NXP BUK7575-100A 晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
|
||
BUK7575-100A
|
Nexperia | 功能相似 | SOT-78 |
NXP BUK7575-100A 晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
|
||
BUK7575-100A,127
|
Nexperia | 功能相似 | TO-220-3 |
MOSFET N-CH 100V 23A TO220AB
|
||
STP24NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP24NF10 晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review