Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP52T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BSP52T1G 单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
|
||
BSP52T3G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BSP52T3G 达林顿晶体管, NPN, 80V, SOT-223
|
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