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Model MUBW50-12E8
Description Trans IGBT Module N-CH 1200V 90A 350000mW 24Pin
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Brand: IXYS Semiconductor
Packaging E3
Delivery time
Packaging method Box
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2895) Minimum order quantity(1)
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Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/Input capacitance (Cies): 3.8nF @25V

Technical parameters/rated power (Max): 350 W

Encapsulation parameters/installation method: Chassis

Package parameters/number of pins: 35

Encapsulation parameters/Encapsulation: E3

External dimensions/packaging: E3

Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Box

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MUBW35-12E7 MUBW35-12E7 IXYS Semiconductor 功能相似 E2
MODULE IGBT CBI E2
PDF
MUBW50-12A8 MUBW50-12A8 IXYS Semiconductor 功能相似 E3
Trans IGBT Module N-CH 1200V 85A 350000mW 24Pin
PDF

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